The influence of dose rate and analysis procedure on measured damage in P+ ion implanted GaAs

Abstract

It is shown that the damage measured following 40 keV P+ implantation into GaAs at room temperature, depends significantly upon the ion dose rate as well as ion dose. Substantial implantation annealing of the damage at room temperature was also observed. The importance of these results in making intercomparisons between different ion species implantation in GaAs is discussed.