Composition and structure of Co films/Si substrate systems prepared by means of self-ion assisted deposition and accompanying silicon damage

Abstract

The effects of ion implantation of Xe ions as a marker, irradiation of Co assisting ions on the damage of silicon structure and on the efficiency of intermixing of components in an interface region in cobalt/silicon systems constructed by means of the self-ion assisted deposition (SIAD) method was investigated by utilizing the Rutherford backscattering spectrometry in conjunction with channeling (RBS/C) technique and RUMP simulation code.