Composition and structure of Co films/Si substrate systems prepared by means of self-ion assisted deposition and accompanying silicon damage
| dc.contributor.author | Tashlykov, I. S. | |
| dc.contributor.author | Zukowski, P. V. | |
| dc.contributor.author | Mikhalkovich, O. M. | |
| dc.contributor.author | Ermakov, Yu. A. | |
| dc.contributor.author | Chernysh, V. S. | |
| dc.date.accessioned | 2018-02-28T12:47:57Z | |
| dc.date.available | 2018-02-28T12:47:57Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | The effects of ion implantation of Xe ions as a marker, irradiation of Co assisting ions on the damage of silicon structure and on the efficiency of intermixing of components in an interface region in cobalt/silicon systems constructed by means of the self-ion assisted deposition (SIAD) method was investigated by utilizing the Rutherford backscattering spectrometry in conjunction with channeling (RBS/C) technique and RUMP simulation code. | ru_RU |
| dc.identifier.uri | http://elib.bspu.by/handle/doc/31335 | |
| dc.language.iso | en | ru_RU |
| dc.relation.ispartofseries | 6th International conference «New electrical and electronic technologies and their industrial implementation NEET2009». Zakopane, June 23–26, 2009;p. 72 | |
| dc.subject | БГПУ | ru_RU |
| dc.subject | cobalt/silicon systems | ru_RU |
| dc.subject | SIAD | ru_RU |
| dc.subject | silicon damage | ru_RU |
| dc.title | Composition and structure of Co films/Si substrate systems prepared by means of self-ion assisted deposition and accompanying silicon damage | ru_RU |
| dc.type | Article | ru_RU |