The deformation scattering mechanism and conduction electron distribution function in aluminium

Abstract

The influence of low-temperature plastic deformation on the electrical resistivity and magnetoresistance of aluminium is studied experimentally. During deformation realized by multiple slip, anisotropy of the electronic distribut ion function is independent of dislocation density, but the magnetoresistance has a maximum, associated with effective electron scattering at small angles in long-range stress fields. Conduction electron scattering at point deformation defects essentially makes the distribution function isotropic, as seen in growth of the temperature dependent addition to resistivity and in decline of the relative transverse magnetoresistance in the temperature range 4·2-30 K.