Radiation damage and amorphization mechanisms in Xe+ irradiated CuInSe2 single crystals

Abstract

The damage evolution in ion bombarded CuInSe2 single crystal has been studied using the RBS/channelling analysis with 2MeV He+ ions. 40keV Xe+ ions were implanted with fluences in the range from 10^13 to 10^16 cm^(–2) and an ion current density of 1.9μA/cm^2 at room temperature. It was found that the radiation accumulation follows a linear function in a double logarithmic plot with slope m=1.5. The saturation level of the damage was achieved at a fluence of about 10^15 cm^(–2). A heterogeneous mechanism of the damage accumulation in the CuInSe2 crystal irradiated with ions with mass equal to or greater than xenon mass is suggested.