Radiation damage and amorphization mechanisms in Xe+ irradiated CuInSe2 single crystals
| dc.contributor.author | Yakushev, M. V. | |
| dc.contributor.author | Tashlykov, I. S. | |
| dc.contributor.author | Tomlinson, R. D. | |
| dc.contributor.author | Hill, A. E. | |
| dc.contributor.author | Pilkington, R. D. | |
| dc.date.accessioned | 2016-05-03T07:50:22Z | |
| dc.date.available | 2016-05-03T07:50:22Z | |
| dc.date.issued | 1997 | |
| dc.description.abstract | The damage evolution in ion bombarded CuInSe2 single crystal has been studied using the RBS/channelling analysis with 2MeV He+ ions. 40keV Xe+ ions were implanted with fluences in the range from 10^13 to 10^16 cm^(–2) and an ion current density of 1.9μA/cm^2 at room temperature. It was found that the radiation accumulation follows a linear function in a double logarithmic plot with slope m=1.5. The saturation level of the damage was achieved at a fluence of about 10^15 cm^(–2). A heterogeneous mechanism of the damage accumulation in the CuInSe2 crystal irradiated with ions with mass equal to or greater than xenon mass is suggested. | ru_RU |
| dc.identifier.uri | http://elib.bspu.by/handle/doc/12643 | |
| dc.language.iso | en | ru_RU |
| dc.publisher | Trans Tech Publications, Switzerland | ru_RU |
| dc.relation.ispartofseries | Materials Science Forum;vols. 248–249, pp. 171–176 | |
| dc.subject | БГПУ | ru_RU |
| dc.subject | CuInSe2 | ru_RU |
| dc.subject | radiation damage | ru_RU |
| dc.subject | RBS/channelling | ru_RU |
| dc.subject | Xe implantation | ru_RU |
| dc.title | Radiation damage and amorphization mechanisms in Xe+ irradiated CuInSe2 single crystals | ru_RU |
| dc.type | Article | ru_RU |