Disorder dependence of ion implanted GaAs on the type of ion

Abstract

Channeling experiments with 1.0 MeV He+ ions have been carried out to study lattice damage of (111) GaAs crystals after 60 and 110 keV aluminum and phosphorus implantation. The implantation and the channeling measurements have been performed in situ at 42 К and at room temperature (RT) Implant doses ranged from 2.8*10^12 to 8*10^16 ions/cm^2. We have observed large differences in the level of the measured damage for Al+ and P+ implantations into GaAs at RT within a dose range 10^13–10^15 ions/cm^2. The chemical nature of the interaction between Al+ and P+ and GaAs is different. Consequently, it is perposed that the effect can be explained by different types of defect formation.