Composition of thin C, Ti, Zr and Mo-based layers fabricated on Si by means of SIAD and accompanying radiation damage of Si surface

Abstract

The development in the structure and composition of C, Ti. Zr and Mo-based layers formed by self ion-assisted deposition (SIAD) of thin films onto silicon when (100)-silicon wafers were floated to a negative potential with respect to the source of 3 kV to accelerate the ion species is reported. Analysis was carried out using RBS/Channeling methods and the RUMP code computer simulation. Elemental analysis of the coatings shows a content of carbon, oxygen, silicon and hydrogen in coatings. A quantitative evaluation of ion irradiation effects during low-energy SIAD of thin films on silicon is given.