Повреждение структуры кремния при ионно-ассистированном осаждении металлсодержащего покрытия в условиях самооблучения

Abstract

This paper discussed an dose dependence of a damage in Si during self ion-assisted deposition of a thin metal (Ti) films. RBS/channeling technique was applied to investigate a depth distribution of the damage. It is observed that a concentration of defects increases with a dose of ions at comparable energies of assisting ions Ti1. The maximum concentration displaced of clusters of atoms of silicon obtained at an implantation of ions Xe+ decreases at the subsequent self ion-assisted deposition of coating, that contacts to an activation of migratory processes into the depth of silicon at heightened energy release (0,22 ev/atoms) in the stage of atomic collisions.