On the problem of cryogenic electron devices design using the low-temperature thermomagnetic phenomena in normal metals

Abstract

The investigation deals with the problem of development of cryogenic electron devices using low-temperature galvano- and thermomagnetic phenomena in normal metals. For example, the operation principle of widely used barretter is based on its N-shape voltage-current characteristic, which permits to stabilize the output current in the wide range of input voltage. Our investigations of voltage-current characteristics of copper single-crystals in strong transverse magnetic field show the existence of N-shape dependence of the output voltage on the supplied current. This is due to the nature of the electron system reply on the external perturbations (electric and magnetic fields) in the presence of metal kinetic coefficients anisotropy. The observed phenomena gives the opportunity of design of the voltage-stabilizing devices with output resistance of about 10^(-8) Ohm.