Composition of thin C, Ti, Zr and Mo-based layers fabricated on Si by means of SIAD and accompanying radiation damage of Si surface
| dc.contributor.author | Tashlykov, I. S. | |
| dc.contributor.author | Wesch, W. | |
| dc.contributor.author | Wendler, E. | |
| dc.date.accessioned | 2015-11-09T06:31:45Z | |
| dc.date.available | 2015-11-09T06:31:45Z | |
| dc.date.issued | 2003 | |
| dc.description.abstract | The development in the structure and composition of C, Ti. Zr and Mo-based layers formed by self ion-assisted deposition (SIAD) of thin films onto silicon when (100)-silicon wafers were floated to a negative potential with respect to the source of 3 kV to accelerate the ion species is reported. Analysis was carried out using RBS/Channeling methods and the RUMP code computer simulation. Elemental analysis of the coatings shows a content of carbon, oxygen, silicon and hydrogen in coatings. A quantitative evaluation of ion irradiation effects during low-energy SIAD of thin films on silicon is given. | ru_RU |
| dc.identifier.uri | http://elib.bspu.by/handle/doc/7378 | |
| dc.language.iso | en | ru_RU |
| dc.relation.ispartofseries | III International Symposium "Neet 2003". May 13-16 2003, Zakopane, Poland;pp. 198–200 | |
| dc.subject | БГПУ | ru_RU |
| dc.subject | Self-ion-assisted deposition | ru_RU |
| dc.subject | Thin film | ru_RU |
| dc.subject | Silicon | ru_RU |
| dc.title | Composition of thin C, Ti, Zr and Mo-based layers fabricated on Si by means of SIAD and accompanying radiation damage of Si surface | ru_RU |
| dc.type | Article | ru_RU |