Peculiarities of distribution of defects and introduced impurity in P+-implanted GaAs crystals
Loading...
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
In this work distribution of defects and introduced impurity in P+-implanted GaAs crystals are investigated and peculiarities of this distribution are described.
Description
Keywords
БГПУ, gallium arsenide, distribution of defects, phosphorus ion